STB14NK50ZT4

Specifications

Nominal Vgs

3.75 V

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn Off Delay Time

54 ns

Input Capacitance Ciss Max Vds

2000pF @ 25V

JESD-609 Kodu

e3

Terminal

SMD/SMT

Fet Type

N-Channel

Akım Değeri

14A

ECCN Kodu

EAR99

Continuous Drain Current Id

6A

Gate To Source Voltage Vgs

30V

Fall Time Typ

12 ns

Yükseklik

4.6mm

Current Continuous Drain Id25

14A Tc

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Kaplaması

Matte Tin (Sn) - annealed

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

150W Tc

Direnç

380MOhm

Transistor Element Material

SILICON

Threshold Voltage

3.75V

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

48A

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Avalanche Energy Rating Eas

400 mJ

Genişlik

9.35mm

Ambalaj

Tape & Reel (TR)

Radyasyon Dayanımı

No

Drain To Source Breakdown Voltage

500V

Rds On Max Id Vgs

380m Ω @ 6A, 10V

Additional Feature

AVALANCHE RATED

Seri

SuperMESH™

Vgs Max

±30V

Power Dissipation

150W

Tepe Reflow Süresi (maks. sn)

30

Dual Supply Voltage

500V

Pin Sayısı

3