Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate To Source Voltage Vgs
- 25V
- Fall Time Typ
- 10 ns
- ECCN Kodu
- EAR99
- Continuous Drain Current Id
- 11A
- Ds Breakdown Voltagemin
- 600V
- Fet Type
- N-Channel
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- JESD-609 Kodu
- e3
- Turn Off Delay Time
- 30 ns
- Input Capacitance Ciss Max Vds
- 790pF @ 50V
- Radyasyon Dayanımı
- No
- Ambalaj
- Tape & Reel (TR)
- Genişlik
- 10.4mm
- Threshold Voltage
- 3V
- Transistor Element Material
- SILICON
- Avalanche Energy Rating Eas
- 200 mJ
- Transistor Application
- SWITCHING
- Terminal Formu
- GULL WING
- Pulsed Drain Currentmax Idm
- 44A
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation Max
- 90W Tc
- Jesd30 Code
- R-PSSO-G2
- Direnç
- 360mOhm
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 11A Tc
- Yükseklik
- 4.6mm
- Terminal Kaplaması
- Matte Tin (Sn) - annealed
- Çalışma Sıcaklığı
- 150°C TJ
- Drain To Source Voltage Vdss
- 600V
- Kurşunsuz
- Lead Free
- Pin Sayısı
- 3
- Montaj
- Surface Mount
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Tepe Reflow Sıcaklığı (°C)
- 245
- Pin Sayısı
- 4
- Power Dissipation
- 90W
- Seri
- MDmesh™ II
- Vgs Max
- ±25V
- Tepe Reflow Süresi (maks. sn)
- 30
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