STB13N80K5

Specifications

Direnç

450mOhm

Vgsth Max Id

5V @ 100μA

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

10.4mm

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

190W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

16ns

Current Continuous Drain Id25

12A Tc

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Yükseklik

4.6mm

RoHS Durumu

ROHS3 Compliant

Turn On Delay Time

16 ns

Genişlik

9.35mm

Ambalaj

Cut Tape (CT)

Temel Parça No

STB13N

Radyasyon Dayanımı

No

Fabrika Tedarik Süresi

26 Weeks

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

29nC @ 10V

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

48A

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Terminal Sayısı

2

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Fet Type

N-Channel

Power Dissipation

190W

Vgs Max

±30V

Case Connection

DRAIN

Seri

SuperMESH5™

Input Capacitance Ciss Max Vds

870pF @ 100V

Turn Off Delay Time

42 ns

Drain To Source Breakdown Voltage

800V

Rds On Max Id Vgs

450m Ω @ 6A, 10V

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB