STB12NK80ZT4

Specifications

Terminal Sayısı

2

Number Of Elements

1

Element Configuration

Single

Fabrika Tedarik Süresi

12 Weeks

Turn On Delay Time

30 ns

Temel Parça No

STB12N

Gate Charge Qg Max Vgs

87nC @ 10V

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

Rise Time

18ns

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

10.4mm

Vgsth Max Id

4.5V @ 100μA

Voltage Rated Dc

800V

Dual Supply Voltage

800V

Pin Sayısı

3

Tepe Reflow Sıcaklığı (°C)

245

Pin Sayısı

3

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj

Surface Mount

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

800V

Rds On Max Id Vgs

750m Ω @ 5.25A, 10V

Tepe Reflow Süresi (maks. sn)

30

Seri

SuperMESH™

Vgs Max

±30V

Power Dissipation

190W

Avalanche Energy Rating Eas

400 mJ

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

42A

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Threshold Voltage

3.75V

Transistor Element Material

SILICON

Radyasyon Dayanımı

No

Genişlik

9.35mm

Ambalaj

Tape & Reel (TR)

Terminal Kaplaması

Matte Tin (Sn) - annealed

Çalışma Sıcaklığı

-55°C~150°C TJ