STB120N4LF6

Specifications

Radyasyon Dayanımı

No

Genişlik

10.4mm

Ambalaj

Tape & Reel (TR)

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Threshold Voltage

1V

Transistor Element Material

SILICON

Direnç

4MOhm

Power Dissipation Max

110W Tc

Jesd30 Code

R-PSSO-G2

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Kaplaması

Matte Tin (Sn) - annealed

Yükseklik

4.6mm

Current Continuous Drain Id25

80A Tc

RoHS Durumu

ROHS3 Compliant

Fall Time Typ

45 ns

Gate To Source Voltage Vgs

20V

ECCN Kodu

EAR99

Continuous Drain Current Id

80A

Fet Type

N-Channel

Case Connection

DRAIN

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

4300pF @ 25V

Turn Off Delay Time

125 ns

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

20 Weeks

Turn On Delay Time

15 ns

Temel Parça No

STB120N

Gate Charge Qg Max Vgs

80nC @ 10V

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

Terminal Sayısı

2

Number Of Elements

1

Element Configuration

Single

Uzunluk

10.75mm

Drive Voltage Max Rds On Min Rds On

5V 10V

Vgsth Max Id

3V @ 250μA

Rise Time

95ns