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STB120N4F6

STMicroelectronics

STB120N4F6

Single MOSFETs Transistors

In StockRoHS: Compliant

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Verified sourcing

RoHS

Compliant

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Specifications

Drain To Source Breakdown Voltage
40V
Rds On Max Id Vgs
4m Ω @ 40A, 10V
Power Dissipation
110W
Vgs Max
±20V
Seri
Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
Tepe Reflow Sıcaklığı (°C)
245
Pin Sayısı
4
Montaj
Surface Mount
Kılıf / Paket
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Pin Sayısı
3
Kurşunsuz
Lead Free
Rise Time
70ns
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Vgsth Max Id
4V @ 250μA
Uzunluk
10.4mm
Drive Voltage Max Rds On Min Rds On
10V
Terminal Sayısı
2
Element Configuration
Single
Number Of Elements
1
Temel Parça No
STB120N
Turn On Delay Time
20 ns
Fabrika Tedarik Süresi
20 Weeks
Montaj Tipi
Surface Mount
Gate Charge Qg Max Vgs
65nC @ 10V
Turn Off Delay Time
40 ns
Input Capacitance Ciss Max Vds
3850pF @ 25V
JESD-609 Kodu
e3
Nem Hassasiyeti (MSL)
1 (Unlimited)
Parça Durumu
Active
Fet Type
N-Channel
Case Connection
DRAIN
ECCN Kodu
EAR99
Continuous Drain Current Id
80A
Fall Time Typ
20 ns
Gate To Source Voltage Vgs
20V
Terminal Kaplaması
Matte Tin (Sn) - annealed
Çalışma Sıcaklığı
-55°C~175°C TJ
RoHS Durumu
ROHS3 Compliant
Current Continuous Drain Id25
80A Tc
Yükseklik
4.6mm

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