STB11NK50ZT4

Specifications

ECCN Kodu

EAR99

Continuous Drain Current Id

4.5A

Fall Time Typ

15 ns

Gate To Source Voltage Vgs

30V

Input Capacitance Ciss Max Vds

1390pF @ 25V

Turn Off Delay Time

41 ns

JESD-609 Kodu

e3

Nominal Vgs

3.75 V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Fet Type

N-Channel

Akım Değeri

10A

Terminal

SMD/SMT

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

40A

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Threshold Voltage

3.75V

Ambalaj

Tape & Reel (TR)

Radyasyon Dayanımı

No

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Kaplaması

Matte Tin (Sn) - annealed

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

10A Tc

Direnç

520mOhm

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

125W Tc

Tepe Reflow Sıcaklığı (°C)

245

Dual Supply Voltage

500V

Pin Sayısı

3

Montaj

Surface Mount

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Sayısı

3

Kurşunsuz

Lead Free

Additional Feature

AVALANCHE RATED

Rds On Max Id Vgs

520m Ω @ 4.5A, 10V

Drain To Source Breakdown Voltage

500V

Tepe Reflow Süresi (maks. sn)

30

Seri

SuperMESH™