Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate To Source Voltage Vgs
- 30V
- Transistor Element Material
- SILICON
- Power Dissipation
- 115W
- Continuous Drain Current Id
- 10A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Turn On Delay Time
- 20 ns
- Element Configuration
- Single
- Kurşunsuz
- Lead Free
- Drain To Source Breakdown Voltage
- 600V
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
- RoHS Durumu
- ROHS3 Compliant
- Fet Type
- N-Channel
- Terminal Kaplaması
- Tin (Sn)
- Turn Off Delay Time
- 55 ns
- Montaj
- Through Hole
- Transistor Application
- SWITCHING
- Vgs Max
- ±30V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 20ns
- Parça Durumu
- Not For New Designs
- Number Of Elements
- 1
- Current Continuous Drain Id25
- 10A Tc
- ECCN Kodu
- EAR99
- Rds On Max Id Vgs
- 750m Ω @ 4.5A, 10V
- Ambalaj
- Tube
- Terminal Sayısı
- 3
- Montaj Tipi
- Through Hole
- Power Dissipation Max
- 115W Tc
- Fall Time Typ
- 30 ns
- Vgsth Max Id
- 4.5V @ 250μA
- Drive Voltage Max Rds On Min Rds On
- 10V
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 70nC @ 10V
- Temel Parça No
- STB10N
- Seri
- SuperMESH™
- Input Capacitance Ciss Max Vds
- 1370pF @ 25V
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- JESD-609 Kodu
- e3
- Drainsource On Resistancemax
- 0.75Ohm
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