STB10N60M2

Specifications

RoHS Durumu

ROHS3 Compliant

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Case Connection

DRAIN

Jesd30 Code

R-PSSO-G2

Drain To Source Breakdown Voltage

650V

Kurşunsuz

Lead Free

Transistor Application

SWITCHING

Vgs Max

±25V

Uzunluk

10.4mm

Montaj

Surface Mount

Turn Off Delay Time

32.5 ns

Yükseklik

4.6mm

Terminal Formu

GULL WING

Fet Type

N-Channel

Transistor Element Material

SILICON

Power Dissipation

85W

Gate To Source Voltage Vgs

25V

Element Configuration

Single

Turn On Delay Time

8.8 ns

Number Of Channels

1

Continuous Drain Current Id

7.5A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Temel Parça No

STB10N6

Seri

MDmesh™ II Plus

Input Capacitance Ciss Max Vds

400pF @ 100V

Genişlik

9.35mm

Gate Charge Qg Max Vgs

13.5nC @ 10V

Pin Sayısı

3

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drainsource On Resistancemax

0.6Ohm

Terminal Sayısı

2

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

ECCN Kodu

EAR99

Rds On Max Id Vgs

600m Ω @ 3A, 10V

Weight

3.949996g

Current Continuous Drain Id25

7.5A Tc

Rise Time

8ns

Parça Durumu

Active