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ST13003N

STMicroelectronics

ST13003N

Single BJT Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Current Collector Cutoff Max
1mA
Max Power Dissipation
20W
Radyasyon Dayanımı
No
Power Dissipation
20W
Number Of Elements
1
Montaj Tipi
Through Hole
Kurşunsuz Kodu
yes
Çalışma Sıcaklığı
150°C TJ
Dc Current Gain Hfe Min Ic Vce
5 @ 1A 10V
Ambalaj
Bulk
Terminal Kaplaması
Matte Tin (Sn)
Terminal Sayısı
3
Terminal Pozisyonu
SINGLE
JESD-609 Kodu
e3
Nem Hassasiyeti (MSL)
1 (Unlimited)
Vce Saturation Max Ib Ic
1.2V @ 330mA, 1A
Collectoremitter Breakdown Voltage
400V
Polaritychannel Type
NPN
Parça Durumu
Obsolete
Montaj
Through Hole
Max Collector Current
1A
Collector Emitter Voltage Vceo
400V
ECCN Kodu
EAR99
RoHS Durumu
ROHS3 Compliant
Transistor Application
SWITCHING
Temel Parça No
ST13003
Pin Sayısı
3
Pin Sayısı
3
Kılıf / Paket
TO-225AA, TO-126-3
Transistor Element Material
SILICON
Configuration
SINGLE
Transistor Type
NPN
Emitter Base Voltage Vebo
9V

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