Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Hfemin
- 40
- Radyasyon Dayanımı
- No
- Polaritychannel Type
- PNP
- Max Collector Current
- 100mA
- Terminal Formu
- GULL WING
- Gain Bandwidth Product
- 50MHz
- Transistor Element Material
- SILICON
- Emitter Base Voltage Vebo
- -5V
- ECCN Kodu
- EAR99
- Voltage Rated Dc
- -300V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Collectoremitter Breakdown Voltage
- 300V
- HTS Kodu
- 8541.21.00.95
- Pin Sayısı
- 3
- Temel Parça No
- SO692
- Max Power Dissipation
- 310mW
- Terminal Kaplaması
- Matte Tin (Sn)
- Current Collector Cutoff Max
- 100nA ICBO
- Collector Base Voltage Vcbo
- 300V
- Montaj Tipi
- Surface Mount
- Montaj
- Surface Mount
- Kurşunsuz Kodu
- yes
- Terminal Pozisyonu
- DUAL
- Power Max
- 310mW
- Transistor Type
- PNP
- Transition Frequency
- 50MHz
- JESD-609 Kodu
- e3
- Akım Değeri
- -100mA
- Transistor Application
- SWITCHING
- Terminal Sayısı
- 3
- Number Of Elements
- 1
- Collector Emitter Voltage Vceo
- 300V
- RoHS Durumu
- ROHS3 Compliant
- Element Configuration
- Single
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Parça Durumu
- Obsolete
- Pin Sayısı
- 3
- Vce Saturation Max Ib Ic
- 500mV @ 2mA, 20mA
- Dc Current Gain Hfe Min Ic Vce
- 25 @ 30mA 10V
- Çalışma Sıcaklığı
- 150°C TJ
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