Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Dc Current Gain Hfe Min Ic Vce
- 10 @ 3A 4V
- Element Configuration
- Single
- Collector Emitter Voltage Vceo
- 100V
- Voltage Rated Dc
- 100V
- Collector Base Voltage Vcbo
- 100V
- Temel Parça No
- MJD31
- Montaj Tipi
- Surface Mount
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- 150°C TJ
- Vce Saturation Max Ib Ic
- 1.2V @ 375mA, 3A
- Montaj
- Surface Mount
- Terminal Sayısı
- 2
- Ambalaj
- Tube
- Parça Durumu
- Obsolete
- Hfemin
- 20
- Transistor Application
- SWITCHING
- Number Of Elements
- 1
- Max Power Dissipation
- 15W
- Kurşunsuz
- Lead Free
- Case Connection
- COLLECTOR
- Radyasyon Dayanımı
- No
- Transistor Type
- NPN
- Polaritychannel Type
- NPN
- Emitter Base Voltage Vebo
- 5V
- RoHS Durumu
- ROHS3 Compliant
- Current Collector Cutoff Max
- 50μA
- Pin Sayısı
- 3
- Vcesatmax
- 1.2 V
- Terminal Kaplaması
- Tin (Sn)
- ECCN Kodu
- EAR99
- Terminal Formu
- GULL WING
- Collectoremitter Breakdown Voltage
- 100V
- Akım Değeri
- 3A
- Pin Sayısı
- 3
- Power Dissipation
- 1.56W
- Max Collector Current
- 3A
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material
- SILICON
- JESD-609 Kodu
- e3
- Jesd30 Code
- R-PSSO-G2
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