IRF820

Specifications

Montaj

Through Hole

Rise Time

13ns

Continuous Drain Current Id

4A

Operating Mode

ENHANCEMENT MODE

Feedback Capmax Crss

50 pF

Drain Currentmax Abs Id

4A

RoHS Durumu

Non-RoHS Compliant

Terminal Sayısı

3

Voltage Rated Dc

500V

Çalışma Sıcaklığı

150°C TJ

Terminal Kaplaması

Matte Tin (Sn)

Gate To Source Voltage Vgs

30V

Input Capacitance Ciss Max Vds

315pF @ 25V

Power Dissipation Max

80W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Akım Değeri

2.5A

Drive Voltage Max Rds On Min Rds On

10V

Avalanche Energy Rating Eas

210 mJ

Element Configuration

Single

Turn On Delay Time

10 ns

Power Dissipation

80W

Additional Feature

HIGH VOLTAGE

Current Continuous Drain Id25

4A Tc

Rds On Max Id Vgs

3 Ω @ 1.5A, 10V

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

12A

Pin Sayısı

3

Radyasyon Dayanımı

No

Kılıf / Paket

TO-220-3

Gate Charge Qg Max Vgs

17nC @ 10V

Drain To Source Breakdown Voltage

500V

Jesd30 Code

R-PSIP-T3

Number Of Elements

1

Ambalaj

Tube

Seri

PowerMESH™ II

Vgsth Max Id

4V @ 250μA

Parça Durumu

Obsolete

Transistor Element Material

SILICON

Vgs Max

±30V