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BUT70W

STMicroelectronics

BUT70W

Single BJT Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Radyasyon Dayanımı
No
RoHS Durumu
ROHS3 Compliant
Vce Saturation Max Ib Ic
900mV @ 7A, 70A
Ambalaj
Tube
Polaritychannel Type
NPN
Nem Hassasiyeti (MSL)
1 (Unlimited)
JESD-609 Kodu
e3
Montaj
Through Hole
Çalışma Sıcaklığı
150°C TJ
Collectoremitter Saturation Voltage
900mV
Transistor Application
SWITCHING
Collector Emitter Voltage Vceo
125V
Emitter Base Voltage Vebo
7V
Parça Durumu
Not For New Designs
Transistor Type
NPN
Kılıf / Paket
TO-247-3
Terminal Sayısı
3
Max Collector Current
32A
Power Dissipation
200W
Temel Parça No
BUT70
Collector Base Voltage Vcbo
200V
Max Power Dissipation
200W
Akım Değeri
7A
Collectoremitter Breakdown Voltage
125V
Kurşunsuz
Lead Free
Number Of Elements
1
Transistor Element Material
SILICON
Lifecycle Status
NRND (Last Updated: 8 months ago)
Element Configuration
Single
Contact Plating
Tin
Pin Sayısı
3
Voltage Rated Dc
125V
ECCN Kodu
EAR99
Montaj Tipi
Through Hole

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