Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 125W
- Hfemin
- 10
- Temel Parça No
- BU508
- Collectoremitter Breakdown Voltage
- 700V
- Polaritychannel Type
- NPN
- Fabrika Tedarik Süresi
- 8 Weeks
- Pin Sayısı
- 3
- Transistor Application
- SWITCHING
- Transistor Type
- NPN
- Max Collector Current
- 8A
- Current Collector Cutoff Max
- 200μA
- Dc Current Gain Hfe Min Ic Vce
- 10 @ 100mA 5V
- Montaj
- Through Hole
- Ambalaj
- Tube
- Element Configuration
- Single
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Uzunluk
- 15.75mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collector Emitter Voltage Vceo
- 700V
- Terminal Sayısı
- 3
- Power Dissipation
- 125W
- Vce Saturation Max Ib Ic
- 1V @ 1.6A, 4.5A
- Reach Svhc
- No SVHC
- Genişlik
- 5.15mm
- Radyasyon Dayanımı
- No
- Yükseklik
- 24.45mm
- Parça Durumu
- Active
- Kılıf / Paket
- TO-247-3
- Montaj Tipi
- Through Hole
- Emitter Base Voltage Vebo
- 9V
- Pin Sayısı
- 3
- Çalışma Sıcaklığı
- 150°C TJ
- JESD-609 Kodu
- e3
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- RoHS Durumu
- ROHS3 Compliant
- Max Junction Temperature Tj
- 150°C
- Kurşunsuz
- Lead Free
- Number Of Elements
- 1
- Contact Plating
- Tin
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