Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Dc Current Gain Hfe Min Ic Vce
- 750 @ 3A 3V
- Akım Değeri
- -8A
- Çalışma Sıcaklığı
- 150°C TJ
- JESD-609 Kodu
- e3
- Vcesatmax
- 2 V
- Hfemin
- 750
- Montaj Tipi
- Through Hole
- Transistor Type
- PNP - Darlington
- Max Collector Current
- 8A
- Voltage Rated Dc
- -80V
- Terminal Sayısı
- 3
- Collector Emitter Voltage Vceo
- 80V
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Continuous Collector Current
- 8A
- Contact Plating
- Tin
- Montaj
- Through Hole
- Transistor Element Material
- SILICON
- Kurşunsuz Kodu
- yes
- Max Power Dissipation
- 60W
- Current Collector Cutoff Max
- 500μA
- Kurşunsuz
- Lead Free
- ECCN Kodu
- EAR99
- Collector Base Voltage Vcbo
- 80V
- Element Configuration
- Single
- RoHS Durumu
- ROHS3 Compliant
- Jedec95 Code
- TO-220AB
- Reach Svhc
- No SVHC
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collectoremitter Saturation Voltage
- 2V
- Transition Frequency
- 20MHz
- Ambalaj
- Tube
- Vce Saturation Max Ib Ic
- 2V @ 12mA, 3A
- Yükseklik
- 9.15mm
- Emitter Base Voltage Vebo
- 5V
- Transistor Application
- SWITCHING
- Number Of Elements
- 1
- Kılıf / Paket
- TO-220-3
- Uzunluk
- 10.4mm
- Power Dissipation
- 60W
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