Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Collector Emitter Voltage Vceo
- 60V
- Vcesatmax
- 0.8 V
- Collectoremitter Saturation Voltage
- 800mV
- Terminal Kaplaması
- Matte Tin (Sn)
- Max Collector Current
- 8A
- Max Power Dissipation
- 50W
- Collectoremitter Breakdown Voltage
- 60V
- Voltage Rated Dc
- 60V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- ECCN Kodu
- EAR99
- Transistor Application
- SWITCHING
- Element Configuration
- Single
- Parça Durumu
- Obsolete
- Power Dissipation
- 50W
- Current Collector Cutoff Max
- 100μA
- Gain Bandwidth Product
- 12MHz
- Vce Saturation Max Ib Ic
- 800mV @ 600mA, 6A
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 3
- Pin Sayısı
- 3
- Kurşunsuz Kodu
- yes
- Transition Frequency
- 12MHz
- Polaritychannel Type
- NPN
- JESD-609 Kodu
- e3
- Emitter Base Voltage Vebo
- 5V
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Ambalaj
- Tube
- Kurşunsuz
- Lead Free
- Transistor Type
- NPN
- Akım Değeri
- 8A
- Temel Parça No
- BD535
- Dc Current Gain Hfe Min Ic Vce
- 25 @ 2A 2V
- Kılıf / Paket
- TO-220-3
- Hfemin
- 20
- Çalışma Sıcaklığı
- 150°C TJ
- Montaj
- Through Hole
- Number Of Elements
- 1
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