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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Polarity
- PNP
- Current Collector Cutoff Max
- 500μA
- Fabrika Tedarik Süresi
- 8 Weeks
- Parça Durumu
- Active
- Emitter Base Voltage Vebo
- 1V
- Vce Saturation Max Ib Ic
- 3.5V @ 80mA, 20A
- Element Configuration
- Single
- ECCN Kodu
- EAR99
- Collectoremitter Breakdown Voltage
- 80V
- Max Collector Current
- 25A
- JESD-609 Kodu
- e3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Dissipation
- 130W
- Hfemin
- 300
- Dc Current Gain Hfe Min Ic Vce
- 500 @ 10A 3V
- Ambalaj
- Tube
- Weight
- 6.500007g
- Number Of Elements
- 1
- Pin Sayısı
- 3
- Jesd30 Code
- R-PSFM-T3
- Yükseklik
- 24.45mm
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Collector Base Voltage Vcbo
- 80V
- Transistor Type
- PNP - Darlington
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Contact Plating
- Tin
- Montaj Tipi
- Through Hole
- Terminal Sayısı
- 3
- Max Power Dissipation
- 130W
- Continuous Collector Current
- 25A
- Transistor Application
- SWITCHING
- Temel Parça No
- 2STW
- Max Junction Temperature Tj
- 150°C
- Collectoremitter Saturation Voltage
- 3.5V
- Collector Emitter Voltage Vceo
- 80V
- Montaj
- Through Hole
- Çalışma Sıcaklığı
- 150°C TJ
- Kılıf / Paket
- TO-247-3
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