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2ST501T

STMicroelectronics

2ST501T

Single BJT Transistors

RoHS: Compliant

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RoHS

Compliant

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Specifications

Collectoremitter Breakdown Voltage
350V
Max Collector Current
4A
Element Configuration
Single
Emitter Base Voltage Vebo
5V
Vce Saturation Max Ib Ic
1.5V @ 2mA, 2A
Currentcollector Ic Max
4A
Fabrika Tedarik Süresi
8 Weeks
Max Breakdown Voltage
350V
Voltage Collector Emitter Breakdown Max
350V
Current Collector Cutoff Max
100μA
Parça Durumu
Active
Tedarikçi Cihaz Paketi
TO-220AB
Polarity
NPN
Number Of Elements
1
Dc Current Gain Hfe Min Ic Vce
2000 @ 2A 2V
Ambalaj
Tube
Weight
2.299997g
Hfemin
2000
Nem Hassasiyeti (MSL)
1 (Unlimited)
Min. Çalışma Sıcaklığı
-65°C
RoHS Durumu
ROHS3 Compliant
Transistor Type
NPN - Darlington
Montaj Tipi
Through Hole
Maks. Çalışma Sıcaklığı
150°C
Çalışma Sıcaklığı
150°C TJ
Montaj
Through Hole
Kurşunsuz
Lead Free
Kılıf / Paket
TO-220-3
Collector Emitter Voltage Vceo
350V
Collectoremitter Saturation Voltage
1.5V
Power Max
100W
Max Power Dissipation
100W
Continuous Collector Current
4A
Temel Parça No
2ST50

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