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RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 7.8mm
- Transistor Application
- SWITCHING
- Collector Emitter Voltage Vceo
- 30V
- Power Dissipation
- 12.5W
- Temel Parça No
- 2SB7
- Hfemin
- 100
- Parça Durumu
- Obsolete
- Contact Plating
- Tin
- Emitter Base Voltage Vebo
- 5V
- Number Of Elements
- 1
- Çalışma Sıcaklığı
- 150°C TJ
- Vce Saturation Max Ib Ic
- 1.1V @ 150mA, 3A
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 100mA 2V
- Genişlik
- 2.9mm
- RoHS Durumu
- ROHS3 Compliant
- Tepe Reflow Sıcaklığı (°C)
- 250
- Transition Frequency
- 100MHz
- Transistor Element Material
- SILICON
- Yükseklik
- 11.05mm
- Polaritychannel Type
- PNP
- Max Power Dissipation
- 12.5W
- Max Collector Current
- 3A
- Kılıf / Paket
- TO-225AA, TO-126-3
- Kurşunsuz
- Lead Free
- Collector Base Voltage Vcbo
- 60V
- Montaj Tipi
- Through Hole
- Montaj
- Through Hole
- Transistor Type
- PNP
- Kurşunsuz Kodu
- yes
- Element Configuration
- Single
- Gain Bandwidth Product
- 100MHz
- Current Collector Cutoff Max
- 100μA
- Collectoremitter Breakdown Voltage
- 30V
- Pin Sayısı
- 3
- Collectoremitter Saturation Voltage
- -1.1V
- Ambalaj
- Tube
- Pin Sayısı
- 3
- Akım Değeri
- -3A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
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