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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Hfemin
- 40
- Parça Durumu
- Obsolete
- Kurşunsuz
- Lead Free
- Reach Svhc
- No SVHC
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Current Collector Cutoff Max
- 10nA ICBO
- Collectoremitter Saturation Voltage
- 1.2V
- Element Configuration
- Single
- Collector Emitter Voltage Vceo
- 80V
- Pin Sayısı
- 3
- Akım Değeri
- 500mA
- Uzunluk
- 9.4mm
- Frekans
- 70MHz
- Temel Parça No
- 2N18
- Yükseklik
- 6.6mm
- JESD-609 Kodu
- e3
- Polaritychannel Type
- NPN
- Radyasyon Dayanımı
- No
- Transistor Element Material
- SILICON
- Ambalaj
- Tube
- Collector Base Voltage Vcbo
- 120V
- Max Power Dissipation
- 800mW
- RoHS Durumu
- ROHS3 Compliant
- Gain Bandwidth Product
- 70MHz
- Emitter Base Voltage Vebo
- 7V
- Max Collector Current
- 500mA
- Number Of Elements
- 1
- Kurşunsuz Kodu
- yes
- Pin Sayısı
- 3
- Dc Current Gain Hfe Min Ic Vce
- 40 @ 150mA 10V
- Terminal Sayısı
- 3
- Power Dissipation
- 800mW
- Weight
- 226.796185mg
- Kılıf / Paket
- TO-205AD, TO-39-3 Metal Can
- Terminal Pozisyonu
- BOTTOM
- Voltage Rated Dc
- 120V
- Terminal Kaplaması
- Matte Tin (Sn)
- Max Breakdown Voltage
- 80V
- Genişlik
- 9.4mm
- Vce Saturation Max Ib Ic
- 5V @ 15mA, 150mA
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