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Sanyo

2SK3666-2-TB-E

JFETs Transistors

RoHS: Compliant

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Specifications

Paket
Bulk
Element Configuration
Single
Fet Technology
JUNCTION
Operating Mode
DEPLETION MODE
Uzunluk
2.9mm
Terminal Formu
GULL WING
Drain To Source Resistance
200Ohm
Number Of Elements
1
Continuous Drain Current Id
10mA
Drain Currentmax Abs Id
0.01A
Max Power Dissipation
200mW
Input Capacitance
4pF
Drain To Source Voltage Vdss
30V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Gate To Source Voltage Vgs
-30V
Genişlik
1.5mm
Terminal Kaplaması
Tin/Bismuth (Sn/Bi)
Pin Sayısı
3
Kurşunsuz Kodu
yes
ECCN Kodu
EAR99
Parça Durumu
Active
Transistor Application
AMPLIFIER
Fabrika Tedarik Süresi
6 Weeks
Kurşunsuz
Lead Free
Drain To Source Breakdown Voltage
30V
Ambalaj
Tape & Reel (TR)
Power Dissipation
200mW
Ürün Durumu
Active
Terminal Pozisyonu
DUAL
Yükseklik
1.1mm
Min. Çalışma Sıcaklığı
-55°C
Pin Sayısı
3
Maks. Çalışma Sıcaklığı
150°C
JESD-609 Kodu
e6
Yayın Yılı
2005
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Yüzey Montaj
YES
Polaritychannel Type
N-CHANNEL
Kılıf / Paket
TO-236-3
Terminal Sayısı
3

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