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Technical team support
Specifications
- Voltage Rated Dc
- -60V
- Gain Bandwidth Product
- 200MHz
- HTS Kodu
- 8541.21.00.75
- Transistor Type
- PNP
- Collectoremitter Breakdown Voltage
- 60V
- Montaj Tipi
- Surface Mount
- Turn Off Timemax Toff
- 100ns
- Ambalaj
- Tape & Reel (TR)
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Emitter Base Voltage Vebo
- -5V
- Reach Svhc
- No SVHC
- Terminal Pozisyonu
- DUAL
- Akım Değeri
- -600mA
- Current Collector Cutoff Max
- 100nA
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Power Max
- 200mW
- Kılıf / Paket
- SC-70, SOT-323
- Vcesatmax
- 0.6 V
- Vce Saturation Max Ib Ic
- 1.6V @ 50mA, 500mA
- Çalışma Sıcaklığı
- 150°C TJ
- Hfemin
- 50
- Transition Frequency
- 200MHz
- Max Power Dissipation
- 200mW
- Terminal Kaplaması
- TIN SILVER COPPER
- Polaritychannel Type
- PNP
- Radyasyon Dayanımı
- No
- Montaj
- Surface Mount
- Kurşunsuz
- Lead Free
- Kurşunsuz Kodu
- yes
- Max Collector Current
- 600mA
- Collector Emitter Voltage Vceo
- 1.6V
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 150mA 10V
- Collectoremitter Saturation Voltage
- -1.6V
- Terminal Sayısı
- 3
- Collector Base Voltage Vcbo
- -60V
- Yayın Yılı
- 2006
- Max Breakdown Voltage
- 60V
- Collectorbase Capacitancemax
- 7pF
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