SCT2H12NZGC11

Specifications

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2014

Input Capacitance Ciss Max Vds

184pF @ 800V

Transistor Application

SWITCHING

Yükseklik

26.5mm

REACH Uyumluluk Kodu

not_compliant

Terminal Pozisyonu

SINGLE

Threshold Voltage

2.8V

Current Continuous Drain Id25

3.7A Tc

Drain To Source Breakdown Voltage

1.7kV

Max Junction Temperature Tj

175°C

Gate Charge Qg Max Vgs

14nC @ 18V

Vgsth Max Id

4V @ 900μA

Reach Svhc

Unknown

Montaj

Through Hole

Ambalaj

Tube

Terminal Sayısı

3

Power Dissipation

35W

Turn On Delay Time

16 ns

Vgs Max

+22V, -6V

Continuous Drain Current Id

3.7A

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Configuration

SINGLE WITH BUILT-IN DIODE

Number Of Elements

1

Rds On Max Id Vgs

1.5 Ω @ 1.1A, 18V

Power Dissipation Max

35W Tc

Pin Sayısı

3

Drain To Source Voltage Vdss

1700V

Drive Voltage Max Rds On Min Rds On

18V

Case Connection

ISOLATED

Pulsed Drain Currentmax Idm

9.2A

Çalışma Sıcaklığı

175°C TJ

Fabrika Tedarik Süresi

30 Weeks

Fet Type

N-Channel

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kılıf / Paket

TO-3PFM, SC-93-3