RZM002P02T2L

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Current Continuous Drain Id25

200mA Ta

Kılıf / Paket

SOT-723

Transistor Element Material

SILICON

Drain To Source Breakdown Voltage

-20V

Vgs Max

±10V

Fet Type

P-Channel

Rise Time

4ns

Vgsth Max Id

1V @ 100μA

Pin Sayısı

3

Tepe Reflow Sıcaklığı (°C)

260

Gate Charge Qg Max Vgs

1.4nC @ 4.5V

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2009

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Turn Off Delay Time

17 ns

Fabrika Tedarik Süresi

16 Weeks

Tepe Reflow Süresi (maks. sn)

10

Contact Plating

Copper, Tin

Power Dissipation Max

150mW Ta

Operating Mode

ENHANCEMENT MODE

Montaj

Surface Mount

Fall Time Typ

17 ns

Drive Voltage Max Rds On Min Rds On

1.2V 4.5V

Turn On Delay Time

6 ns

Parça Durumu

Active

Kurşunsuz

Lead Free

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e2

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Cut Tape (CT)

Terminal Sayısı

3

Terminal Kaplaması

Tin/Copper (Sn/Cu)

Rds On Max Id Vgs

1.2 Ω @ 200mA, 4.5V

Continuous Drain Current Id

200mA

Drain Currentmax Abs Id

0.2A

Gate To Source Voltage Vgs

10V

Number Of Elements

1