RZM001P02T2L

Specifications

Number Of Channels

1

Vgsth Max Id

1V @ 100μA

Yükseklik

550μm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Kılıf / Paket

SOT-723

Current Continuous Drain Id25

100mA Ta

Drain To Source Breakdown Voltage

-20V

Vgs Max

±10V

Fet Type

P-Channel

Transistor Element Material

SILICON

REACH Uyumluluk Kodu

not_compliant

Turn Off Delay Time

325 ns

Max Junction Temperature Tj

150°C

Power Dissipation Max

150mW Ta

Jesd30 Code

R-PDSO-F3

Fabrika Tedarik Süresi

16 Weeks

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Operating Mode

ENHANCEMENT MODE

Montaj

Surface Mount

Yayın Yılı

2005

RoHS Durumu

ROHS3 Compliant

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Terminal Pozisyonu

DUAL

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Cut Tape (CT)

Terminal Sayısı

3

Turn On Delay Time

46 ns

Parça Durumu

Active

Drive Voltage Max Rds On Min Rds On

1.2V 4.5V

Kurşunsuz

Lead Free

Drain To Source Voltage Vdss

20V

Terminal Formu

FLAT

Power Dissipation

150W

Continuous Drain Current Id

100mA

Rds On Max Id Vgs

3.8 Ω @ 100mA, 4.5V

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

10V

Number Of Elements

1