RZF013P01TL

Specifications

Rds On Max Id Vgs

260m Ω @ 1.3A, 4.5V

Continuous Drain Current Id

1.3A

Input Capacitance Ciss Max Vds

290pF @ 6V

Number Of Elements

1

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

150°C TJ

Kurşunsuz Kodu

yes

Drain To Source Voltage Vdss

12V

Drive Voltage Max Rds On Min Rds On

1.5V 4.5V

Parça Durumu

Active

Kurşunsuz

Lead Free

JESD-609 Kodu

e2

Terminal Pozisyonu

DUAL

Nem Hassasiyeti (MSL)

1 (Unlimited)

Qualification Status

Not Qualified

Ambalaj

Cut Tape (CT)

Terminal Kaplaması

Tin/Copper (Sn/Cu)

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2009

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

10

Fabrika Tedarik Süresi

16 Weeks

Jesd30 Code

R-PDSO-F3

Power Dissipation Max

800mW Ta

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

Configuration

SINGLE WITH BUILT-IN DIODE

Current Continuous Drain Id25

1.3A Ta

Kılıf / Paket

3-SMD, Flat Lead

Transistor Element Material

SILICON

Vgs Max

±10V

Fet Type

P-Channel

Vgsth Max Id

1V @ 1mA

Ds Breakdown Voltagemin

12V

Tepe Reflow Sıcaklığı (°C)

260

Gate Charge Qg Max Vgs

2.4nC @ 4.5V

Drainsource On Resistancemax

0.26Ohm

Pin Sayısı

3