RYE002N05TCL

Specifications

Ds Breakdown Voltagemin

50V

Jesd30 Code

R-PDSO-G3

Drainsource On Resistancemax

2.8Ohm

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ambalaj

Cut Tape (CT)

Montaj Tipi

Surface Mount

Vgs Max

±8V

Kılıf / Paket

SC-75, SOT-416

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

800mV @ 1mA

Terminal Formu

GULL WING

Terminal Sayısı

3

Parça Durumu

Not For New Designs

Kurşunsuz

Lead Free

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

0.9V 4.5V

Configuration

SINGLE WITH BUILT-IN DIODE

Yayın Yılı

2011

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain Currentmax Abs Id

0.2A

ECCN Kodu

EAR99

Drain To Source Voltage Vdss

50V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

26pF @ 10V

Çalışma Sıcaklığı

150°C TJ

Transistor Application

SWITCHING

Power Dissipation Max

150mW Ta

Current Continuous Drain Id25

200mA Ta

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

200mA

REACH Uyumluluk Kodu

not_compliant

Rds On Max Id Vgs

2.2 Ω @ 200mA, 4.5V

Terminal Pozisyonu

DUAL