RW1A013ZPT2R

Specifications

Rds On Max Id Vgs

260m Ω @ 1.3A, 4.5V

Montaj

Surface Mount

Radyasyon Dayanımı

No

Drive Voltage Max Rds On Min Rds On

1.5V 4.5V

Fabrika Tedarik Süresi

10 Weeks

Kurşunsuz

Lead Free

Vgsth Max Id

1V @ 1mA

Kılıf / Paket

SOT-563, SOT-666

Gate Charge Qg Max Vgs

2.4nC @ 4.5V

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Gate To Source Voltage Vgs

10V

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

6

Fet Type

P-Channel

ECCN Kodu

EAR99

Çalışma Sıcaklığı

150°C TJ

Continuous Drain Current Id

1.5A

Fall Time Typ

9 ns

Montaj Tipi

Surface Mount

Drain To Source Breakdown Voltage

-12V

Power Dissipation Max

400mW Ta

Number Of Channels

1

Turn Off Delay Time

30 ns

Turn On Delay Time

8 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Not For New Designs

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

1.5A Ta

Number Of Elements

1

Input Capacitance Ciss Max Vds

290pF @ 6V

Terminal Sayısı

6

Element Configuration

Single

Terminal Formu

FLAT

Vgs Max

±10V

Drain To Source Voltage Vdss

12V

Transistor Application

SWITCHING

Rise Time

10ns

Terminal Pozisyonu

DUAL

Yayın Yılı

2013