RV1C002UNT2CL

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Parça Durumu

Active

Yayın Yılı

2014

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Cut Tape (CT)

Drain Currentmax Abs Id

0.15A

Drive Voltage Max Rds On Min Rds On

1.2V 4.5V

Current Continuous Drain Id25

150mA Ta

Kurşunsuz

Lead Free

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

Power Dissipation Max

100mW Ta

Input Capacitance Ciss Max Vds

12pF @ 10V

Vgsth Max Id

1V @ 100μA

Rds On Max Id Vgs

2 Ω @ 150mA, 4.5V

Continuous Drain Current Id

150mA

Fabrika Tedarik Süresi

16 Weeks

Radyasyon Dayanımı

No

Drain To Source Breakdown Voltage

20V

Montaj

Surface Mount

ECCN Kodu

EAR99

Turn Off Delay Time

12 ns

Pin Sayısı

3

Fall Time Typ

25 ns

Fet Type

N-Channel

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

150°C TJ

Gate To Source Voltage Vgs

8V

Vgs Max

±8V

Rise Time

4ns

Turn On Delay Time

3 ns

Kılıf / Paket

3-SMD, No Lead

Transistor Element Material

SILICON

Terminal Sayısı

3

Terminal Pozisyonu

BOTTOM

Power Dissipation

100mW

Number Of Elements

1