RV1C001ZPT2L

Specifications

Fall Time Typ

137 ns

Fet Type

P-Channel

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Surface Mount

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Voltage Vdss

20V

Turn Off Delay Time

325 ns

Transistor Element Material

SILICON

Kılıf / Paket

3-SMD, No Lead

Terminal Sayısı

3

Terminal Pozisyonu

BOTTOM

Power Dissipation

100mW

Number Of Elements

1

Çalışma Sıcaklığı

150°C TJ

Rise Time

62ns

Vgs Max

±10V

Drive Voltage Max Rds On Min Rds On

1.2V 4.5V

Current Continuous Drain Id25

100mA Ta

Kurşunsuz

Lead Free

Operating Mode

ENHANCEMENT MODE

Configuration

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Parça Durumu

Active

Yayın Yılı

2016

Jesd30 Code

R-XBCC-N3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Cut Tape (CT)

Drain Currentmax Abs Id

0.1A

Continuous Drain Current Id

100mA

Fabrika Tedarik Süresi

16 Weeks

Montaj

Surface Mount

Drain To Source Breakdown Voltage

-20V

Case Connection

DRAIN

Power Dissipation Max

100mW Ta

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

15pF @ 10V

Vgsth Max Id

1V @ 100μA

Rds On Max Id Vgs

3.8 Ω @ 100mA, 4.5V