RUQ050N02TR

Specifications

Tepe Reflow Süresi (maks. sn)

10

Fabrika Tedarik Süresi

20 Weeks

Turn On Delay Time

15 ns

Parça Durumu

Not For New Designs

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Input Capacitance Ciss Max Vds

900pF @ 10V

Power Dissipation Max

1.25W Ta

Pin Sayısı

6

Çalışma Sıcaklığı

150°C TJ

Rds On Max Id Vgs

30m Ω @ 5A, 4.5V

Pin Sayısı

6

Terminal Formu

GULL WING

Number Of Elements

1

Gate Charge Qg Max Vgs

12nC @ 4.5V

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Abs Id

5A

Fet Type

N-Channel

Turn Off Delay Time

70 ns

Continuous Drain Current Id

5A

Pulsed Drain Currentmax Idm

10A

Current Continuous Drain Id25

5A Ta

JESD-609 Kodu

e1

Radyasyon Dayanımı

No

Drainsource On Resistancemax

0.038Ohm

Configuration

SINGLE WITH BUILT-IN DIODE

Rise Time

25ns

Fall Time Typ

100 ns

Transistor Application

SWITCHING

Kurşunsuz Kodu

yes

Terminal Pozisyonu

DUAL

Montaj

Surface Mount

Drain To Source Breakdown Voltage

20V

Power Dissipation

1.25W

Terminal Sayısı

6

Tepe Reflow Sıcaklığı (°C)

260

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2015

ECCN Kodu

EAR99