RUF025N02TL

Specifications

Rise Time

15ns

Fall Time Typ

15 ns

Transistor Application

SWITCHING

Element Configuration

Single

Drainsource On Resistancemax

0.068Ohm

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

260

Drive Voltage Max Rds On Min Rds On

1.5V 4.5V

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Vgs Max

±10V

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

16 Weeks

Tepe Reflow Süresi (maks. sn)

10

Rds On Max Id Vgs

54m Ω @ 2.5A, 4.5V

Reach Svhc

No SVHC

Pin Sayısı

3

Power Dissipation Max

320mW Ta

Number Of Elements

1

Gate Charge Qg Max Vgs

5nC @ 4.5V

Threshold Voltage

300mV

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Terminal Pozisyonu

DUAL

Terminal Kaplaması

TIN COPPER

Yayın Yılı

1999

Gate To Source Voltage Vgs

10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

20V

Power Dissipation

800mW

Terminal Sayısı

3

Ambalaj

Tape & Reel (TR)

Uzunluk

2.1mm

Vgsth Max Id

1.3V @ 1mA

Parça Durumu

Active

Turn On Delay Time

7 ns

Input Capacitance Ciss Max Vds

370pF @ 10V

Kılıf / Paket

3-SMD, Flat Lead