Volume pricing
- 1+ pcs$0.06
- 10+ pcs$0.06
- 100+ pcs$0.05
- 500+ pcs$0.05
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Pozisyonu
- DUAL
- Transistor Element Material
- SILICON
- Power Dissipation
- 150mW
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Montaj
- Surface Mount
- Operating Mode
- ENHANCEMENT MODE
- Turn Off Delay Time
- 17 ns
- Vgsth Max Id
- 800mV @ 1mA
- Fet Type
- N-Channel
- Drainsource On Resistancemax
- 2.8Ohm
- Çalışma Sıcaklığı
- 150°C TJ
- Drain Currentmax Abs Id
- 0.2A
- RoHS Durumu
- ROHS3 Compliant
- Gate To Source Voltage Vgs
- 8V
- Pin Sayısı
- 85
- Yükseklik
- 1.05mm
- Number Of Channels
- 1
- Ambalaj
- Cut Tape (CT)
- Kılıf / Paket
- SC-85
- Power Dissipation Max
- 150mW Ta
- Number Of Elements
- 1
- Vgs Max
- ±8V
- Turn On Delay Time
- 5 ns
- Max Junction Temperature Tj
- 150°C
- Drain To Source Breakdown Voltage
- 50V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Montaj Tipi
- Surface Mount
- Kurşunsuz
- Lead Free
- Parça Durumu
- Active
- Terminal Sayısı
- 3
- ECCN Kodu
- EAR99
- Terminal Formu
- FLAT
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Input Capacitance Ciss Max Vds
- 26pF @ 10V
- Transistor Application
- SWITCHING
- Continuous Drain Current Id
- 200mA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2016
- Rds On Max Id Vgs
- 2.2 Ω @ 200mA, 4.5V
- Drive Voltage Max Rds On Min Rds On
- 0.9V 4.5V
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