RTR030N05TL

Specifications

Input Capacitance Ciss Max Vds

510pF @ 10V

Terminal Sayısı

3

JESD-609 Kodu

e1

Drain To Source Breakdown Voltage

45V

Power Dissipation

1W

Rds On Max Id Vgs

67m Ω @ 3A, 4.5V

Fall Time Typ

26 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Type

N-Channel

Current Continuous Drain Id25

3A Ta

Turn On Delay Time

12 ns

Gate To Source Voltage Vgs

12V

Terminal Pozisyonu

DUAL

Fabrika Tedarik Süresi

21 Weeks

Kurşunsuz Kodu

yes

Montaj

Surface Mount

Uzunluk

2.9mm

Continuous Drain Current Id

3A

Genişlik

1.6mm

Drain Currentmax Abs Id

3A

Power Dissipation Max

1W Ta

Element Configuration

Single

Kılıf / Paket

SC-96

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Transistor Application

SWITCHING

Gate Charge Qg Max Vgs

6.2nC @ 4.5V

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Turn Off Delay Time

34 ns

Yayın Yılı

2009

Tepe Reflow Süresi (maks. sn)

10

Ambalaj

Tape & Reel (TR)

Kurşunsuz

Lead Free

Pin Sayısı

3

Parça Durumu

Not For New Designs

Çalışma Sıcaklığı

150°C TJ

Drainsource On Resistancemax

0.095Ohm

ECCN Kodu

EAR99

Transistor Element Material

SILICON