RTQ020N05TR

Specifications

RoHS Durumu

ROHS3 Compliant

Ds Breakdown Voltagemin

45V

Number Of Elements

1

Input Capacitance Ciss Max Vds

150pF @ 10V

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

JESD-609 Kodu

e1

Operating Mode

ENHANCEMENT MODE

Terminal Sayısı

6

Gate Charge Qg Max Vgs

2.3nC @ 4.5V

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

10

Rds On Max Id Vgs

190m Ω @ 2A, 4.5V

Qualification Status

Not Qualified

Yayın Yılı

2012

Çalışma Sıcaklığı

150°C TJ

Current Continuous Drain Id25

2A Ta

Parça Durumu

Active

Pin Sayısı

6

Fet Type

N-Channel

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-G6

ECCN Kodu

EAR99

Yüzey Montaj

YES

Drainsource On Resistancemax

0.28Ohm

Terminal Formu

GULL WING

Vgs Max

±12V

Pulsed Drain Currentmax Idm

8A

Kurşunsuz Kodu

yes

Montaj Tipi

Surface Mount

Vgsth Max Id

1.5V @ 1mA

Drain To Source Voltage Vdss

45V

Terminal Kaplaması

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Configuration

SINGLE WITH BUILT-IN DIODE

Fabrika Tedarik Süresi

20 Weeks

Terminal Pozisyonu

DUAL

Tepe Reflow Sıcaklığı (°C)

260

Power Dissipation Max

600mW Ta