RTF016N05TL

Specifications

Terminal Pozisyonu

DUAL

Transistor Element Material

SILICON

Vgsth Max Id

1.5V @ 1mA

Fet Type

N-Channel

Montaj

Surface Mount

Turn Off Delay Time

16 ns

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

45V

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Fall Time Typ

10 ns

Drainsource On Resistancemax

0.28Ohm

Çalışma Sıcaklığı

150°C TJ

Ambalaj

Cut Tape (CT)

Gate To Source Voltage Vgs

12V

Pin Sayısı

3

Drain To Source Voltage Vdss

45V

Turn On Delay Time

8 ns

Kılıf / Paket

3-SMD, Flat Lead

Power Dissipation Max

320mW Ta

Number Of Elements

1

Vgs Max

±12V

ECCN Kodu

EAR99

Gate Charge Qg Max Vgs

2.3nC @ 4.5V

Pin Sayısı

3

Rise Time

14ns

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Sayısı

3

Parça Durumu

Active

Kurşunsuz

Lead Free

Transistor Application

SWITCHING

Continuous Drain Current Id

1.6A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2012

Rds On Max Id Vgs

190m Ω @ 1.6A, 4.5V

Input Capacitance Ciss Max Vds

150pF @ 10V

Fabrika Tedarik Süresi

16 Weeks

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Current Continuous Drain Id25

1.6A Ta