RSJ400N10TL

Specifications

Yayın Yılı

2012

Fabrika Tedarik Süresi

20 Weeks

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

80A

Montaj Tipi

Surface Mount

RoHS Durumu

ROHS3 Compliant

Fall Time Typ

250 ns

Drainsource On Resistancemax

0.03Ohm

Turn On Delay Time

25 ns

Vgs Max

±20V

Avalanche Energy Rating Eas

14.6 mJ

Power Dissipation Max

1.35W Ta 50W Tc

Rds On Max Id Vgs

27m Ω @ 40A, 10V

Gate To Source Voltage Vgs

20V

ECCN Kodu

EAR99

Parça Durumu

Active

Jesd30 Code

R-PSSO-G2

Gate Charge Qg Max Vgs

90nC @ 10V

REACH Uyumluluk Kodu

not_compliant

Ds Breakdown Voltagemin

100V

Number Of Elements

1

Input Capacitance Ciss Max Vds

3600pF @ 25V

Kurşunsuz

Lead Free

Rise Time

80ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Vgsth Max Id

2.5V @ 1mA

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

4V 10V

Continuous Drain Current Id

40A

Terminal Formu

GULL WING

Turn Off Delay Time

205 ns

Drain To Source Voltage Vdss

100V

Terminal Pozisyonu

SINGLE

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

150°C TJ

Pin Sayısı

83