RSJ250P10TL

Specifications

Gate Charge Qg Max Vgs

60nC @ 5V

Jesd30 Code

R-PSSO-G2

Parça Durumu

Active

Gate To Source Voltage Vgs

20V

Rds On Max Id Vgs

63m Ω @ 25A, 10V

ECCN Kodu

EAR99

Turn On Delay Time

30 ns

Vgs Max

±20V

Power Dissipation Max

50W Tc

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.063Ohm

Fall Time Typ

180 ns

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

50A

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fabrika Tedarik Süresi

20 Weeks

Yayın Yılı

2011

Current Continuous Drain Id25

25A Ta

Terminal Sayısı

2

Transistor Application

SWITCHING

Montaj

Surface Mount

Fet Type

P-Channel

Number Of Channels

1

Çalışma Sıcaklığı

150°C TJ

Pin Sayısı

83

Pin Sayısı

3

Terminal Pozisyonu

SINGLE

Drain To Source Voltage Vdss

100V

Turn Off Delay Time

310 ns

Ambalaj

Tape & Reel (TR)

Drive Voltage Max Rds On Min Rds On

4V 10V

Terminal Formu

GULL WING

Continuous Drain Current Id

25A

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

-100V

Rise Time

67ns

Input Capacitance Ciss Max Vds

8000pF @ 25V

Number Of Elements

1