RSJ151P10TL

Specifications

Vgs Max

±20V

Power Dissipation Max

1.35W Ta 50W Tc

Avalanche Energy Rating Eas

33 mJ

Rds On Max Id Vgs

120m Ω @ 15A, 10V

ECCN Kodu

EAR99

Jesd30 Code

R-PSSO-G2

Parça Durumu

Active

Gate Charge Qg Max Vgs

64nC @ 10V

REACH Uyumluluk Kodu

not_compliant

Ds Breakdown Voltagemin

100V

Fabrika Tedarik Süresi

20 Weeks

Yayın Yılı

2013

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

30A

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.14Ohm

Drain To Source Voltage Vdss

100V

Terminal Pozisyonu

SINGLE

Ambalaj

Cut Tape (CT)

Çalışma Sıcaklığı

150°C TJ

Pin Sayısı

83

Current Continuous Drain Id25

15A Tc

Terminal Sayısı

2

Transistor Application

SWITCHING

Montaj

Surface Mount

Fet Type

P-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz

Lead Free

Input Capacitance Ciss Max Vds

3800pF @ 25V

Number Of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Vgsth Max Id

2.5V @ 1mA

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

4V 10V

Terminal Formu

GULL WING

Continuous Drain Current Id

15A