RSH070P05GZETB

Specifications

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2009

Fabrika Tedarik Süresi

20 Weeks

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.039Ohm

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

27m Ω @ 7A, 10V

ECCN Kodu

EAR99

Vgs Max

±20V

Power Dissipation Max

2W Ta

Gate Charge Qg Max Vgs

47.6nC @ 5V

Drain Currentmax Abs Id

7A

Ds Breakdown Voltagemin

45V

Parça Durumu

Active

Number Of Elements

1

Input Capacitance Ciss Max Vds

4100pF @ 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgsth Max Id

2.5V @ 1mA

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

4V 10V

Continuous Drain Current Id

7A

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

8

Drain To Source Voltage Vdss

45V

Terminal Pozisyonu

DUAL

Ambalaj

Cut Tape (CT)

Terminal Sayısı

8

Current Continuous Drain Id25

7A Ta

Montaj

Surface Mount

Fet Type

P-Channel

Transistor Application

SWITCHING