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RS1G180MNTB

ROHM Semiconductor

RS1G180MNTB

Single MOSFETs Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.21
  • 10+ pcs$0.20
  • 100+ pcs$0.19
  • 500+ pcs$0.18

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RoHS

Compliant

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Specifications

RoHS Durumu
ROHS3 Compliant
Jesd30 Code
R-PDSO-F5
Current Continuous Drain Id25
18A Ta 80A Tc
Drain To Source Voltage Vdss
40V
Transistor Application
SWITCHING
Operating Mode
ENHANCEMENT MODE
ECCN Kodu
EAR99
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Terminal Pozisyonu
DUAL
Vgsth Max Id
2.5V @ 1mA
Çalışma Sıcaklığı
150°C TJ
Yayın Yılı
2006
Montaj
Surface Mount
Pulsed Drain Currentmax Idm
72A
Input Capacitance Ciss Max Vds
1293pF @ 20V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Drainsource On Resistancemax
0.0092Ohm
Case Connection
DRAIN
Continuous Drain Current Id
18A
Transistor Element Material
SILICON
Number Of Elements
1
Ds Breakdown Voltagemin
40V
Terminal Formu
FLAT
Fet Type
N-Channel
Terminal Sayısı
5
Fabrika Tedarik Süresi
20 Weeks
Pin Sayısı
8
Gate Charge Qg Max Vgs
19.5nC @ 10V
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Configuration
SINGLE WITH BUILT-IN DIODE
Montaj Tipi
Surface Mount
Parça Durumu
Active
Power Dissipation Max
3W Ta 30W Tc
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Rds On Max Id Vgs
7m Ω @ 18A, 10V
Kurşunsuz
Lead Free
Ambalaj
Tape & Reel (TR)
Kılıf / Paket
8-PowerTDFN
Vgs Max
±20V

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