RS1G120MNTB

Specifications

Gate Charge Qg Max Vgs

9.4nC @ 10V

Pin Sayısı

8

Terminal Sayısı

5

Fabrika Tedarik Süresi

20 Weeks

Terminal Formu

FLAT

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Lead Free

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Rds On Max Id Vgs

16.2m Ω @ 12A, 10V

Power Dissipation Max

3W Ta 25W Tc

Parça Durumu

Active

Montaj Tipi

Surface Mount

Vgs Max

±20V

Kılıf / Paket

8-PowerTDFN

Ambalaj

Cut Tape (CT)

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Drain To Source Voltage Vdss

40V

Current Continuous Drain Id25

12A Ta

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-F5

Montaj

Surface Mount

Vgsth Max Id

2.5V @ 1mA

Çalışma Sıcaklığı

150°C TJ

Yayın Yılı

2007

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.0207Ohm

Input Capacitance Ciss Max Vds

570pF @ 20V

Ds Breakdown Voltagemin

40V

Case Connection

DRAIN

Continuous Drain Current Id

12A

Transistor Element Material

SILICON

Number Of Elements

1