RS1E350BNTB

Specifications

Number Of Elements

1

Case Connection

DRAIN

Continuous Drain Current Id

35A

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

30V

Drainsource On Resistancemax

0.0025Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

140A

Input Capacitance Ciss Max Vds

7900pF @ 15V

Yayın Yılı

2015

Çalışma Sıcaklığı

150°C TJ

Vgsth Max Id

2.5V @ 1mA

Montaj

Surface Mount

Drain To Source Voltage Vdss

30V

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Jesd30 Code

R-PDSO-F5

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

35A Ta

Kılıf / Paket

8-PowerTDFN

Vgs Max

±20V

Ambalaj

Cut Tape (CT)

Power Dissipation Max

35W Tc

Rds On Max Id Vgs

1.7m Ω @ 35A, 10V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Montaj Tipi

Surface Mount

REACH Uyumluluk Kodu

not_compliant

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Pin Sayısı

8

Gate Charge Qg Max Vgs

185nC @ 10V

Fet Type

N-Channel

Terminal Formu

FLAT

Fabrika Tedarik Süresi

10 Weeks

Terminal Sayısı

5