RS1E280GNTB

Specifications

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

30V

Current Continuous Drain Id25

28A Ta

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-F5

Montaj

Surface Mount

Turn On Delay Time

19.9 ns

Vgsth Max Id

2.5V @ 1mA

Yayın Yılı

2013

Çalışma Sıcaklığı

150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

12.3ns

Drainsource On Resistancemax

0.0033Ohm

Input Capacitance Ciss Max Vds

2300pF @ 15V

Number Of Channels

1

Transistor Element Material

SILICON

Fall Time Typ

18 ns

Case Connection

DRAIN

Continuous Drain Current Id

28A

Number Of Elements

1

Element Configuration

Single

Weight

70.590313mg

Gate Charge Qg Max Vgs

36nC @ 10V

Gate To Source Voltage Vgs

20V

Pin Sayısı

8

Terminal Sayısı

5

Fabrika Tedarik Süresi

20 Weeks

Terminal Formu

FLAT

Fet Type

N-Channel

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Lead Free

Power Dissipation Max

3W Ta 31W Tc

Rds On Max Id Vgs

2.6m Ω @ 28A, 10V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Parça Durumu

Active

REACH Uyumluluk Kodu

not_compliant