RS1E150GNTB

Specifications

Vgs Max

±20V

Kılıf / Paket

8-PowerTDFN

Ambalaj

Tape & Reel (TR)

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Rds On Max Id Vgs

8.8m Ω @ 15A, 10V

Power Dissipation Max

3W Ta 22.9W Tc

Parça Durumu

Active

REACH Uyumluluk Kodu

not_compliant

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate Charge Qg Max Vgs

10nC @ 10V

Yüzey Montaj

YES

Fabrika Tedarik Süresi

20 Weeks

Terminal Sayısı

5

Fet Type

N-Channel

Terminal Formu

FLAT

Ds Breakdown Voltagemin

30V

Number Of Elements

1

Case Connection

DRAIN

Transistor Element Material

SILICON

Drainsource On Resistancemax

0.0114Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

60A

Input Capacitance Ciss Max Vds

590pF @ 15V

Çalışma Sıcaklığı

150°C TJ

Yayın Yılı

2013

Drain Currentmax Abs Id

15A

Vgsth Max Id

2.5V @ 1mA

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Drain To Source Voltage Vdss

30V

Current Continuous Drain Id25

15A Ta

Jesd30 Code

R-PDSO-F5

RoHS Durumu

ROHS3 Compliant