Volume pricing
- 1+ pcs$0.07
- 500+ pcs$0.05
- 1000+ pcs$0.04
- 2000+ pcs$0.04
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 5.2nC @ 5V
- Kılıf / Paket
- 6-SMD, Flat Leads
- Turn On Delay Time
- 7 ns
- Drive Voltage Max Rds On Min Rds On
- 4V 10V
- Continuous Drain Current Id
- 2.5A
- Yayın Yılı
- 2014
- Kurşunsuz Kodu
- yes
- Terminal Kaplaması
- TIN COPPER
- Gate To Source Voltage Vgs
- 20V
- Fall Time Typ
- 33 ns
- Turn Off Delay Time
- 50 ns
- Element Configuration
- Single
- Vgs Max
- ±20V
- Fet Type
- P-Channel
- Drain To Source Voltage Vdss
- 30V
- Operating Mode
- ENHANCEMENT MODE
- Drainsource On Resistancemax
- 0.075Ohm
- Tepe Reflow Sıcaklığı (°C)
- 260
- Rds On Max Id Vgs
- 75m Ω @ 2.5A, 10V
- ECCN Kodu
- EAR99
- Rise Time
- 16ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Radyasyon Dayanımı
- No
- Input Capacitance Ciss Max Vds
- 480pF @ 10V
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 6
- Terminal Sayısı
- 6
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Power Dissipation Max
- 320mW Ta
- Drain To Source Breakdown Voltage
- -30V
- JESD-609 Kodu
- e2
- Terminal Pozisyonu
- DUAL
- Ambalaj
- Tape & Reel (TR)
- Power Dissipation
- 1W
- Çalışma Sıcaklığı
- 150°C TJ
- Montaj
- Surface Mount
- Vgsth Max Id
- 2.5V @ 1mA
- Tepe Reflow Süresi (maks. sn)
- 10
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