RQ3L050GNTB

Specifications

Input Capacitance Ciss Max Vds

300pF @ 30V

Number Of Elements

1

Yüzey Montaj

YES

Jesd30 Code

R-PDSO-F5

Drain To Source Voltage Vdss

60V

Case Connection

DRAIN

Transistor Application

SWITCHING

Terminal Sayısı

5

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate Charge Qg Max Vgs

2.8nC @ 4.5V

Drainsource On Resistancemax

0.086Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Ambalaj

Cut Tape (CT)

Drain Currentmax Abs Id

5A

Terminal Formu

FLAT

Current Continuous Drain Id25

12A Tc

Kılıf / Paket

8-PowerVDFN

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Fet Type

N-Channel

Avalanche Energy Rating Eas

3.9 mJ

Ds Breakdown Voltagemin

60V

Vgs Max

±20V

Fabrika Tedarik Süresi

20 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

REACH Uyumluluk Kodu

not_compliant

Terminal Pozisyonu

DUAL

Rds On Max Id Vgs

61m Ω @ 5A, 10V

Çalışma Sıcaklığı

150°C TJ

Pulsed Drain Currentmax Idm

20A

Power Dissipation Max

14.8W Tc

Vgsth Max Id

2.5V @ 25μA