RQ3E150GNTB

Specifications

Kılıf / Paket

8-PowerVDFN

Transistor Element Material

SILICON

Current Continuous Drain Id25

15A Ta

Terminal Formu

FLAT

Turn Off Delay Time

34.4 ns

Ambalaj

Tape & Reel (TR)

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

8

Number Of Channels

1

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate Charge Qg Max Vgs

15.3nC @ 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Sayısı

5

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Yayın Yılı

2010

Continuous Drain Current Id

15A

Transistor Application

SWITCHING

Case Connection

DRAIN

Drain To Source Voltage Vdss

30V

Jesd30 Code

R-PDSO-F5

Input Capacitance Ciss Max Vds

850pF @ 15V

Number Of Elements

1

Kurşunsuz

Lead Free

Vgsth Max Id

2.5V @ 1mA

Gate To Source Voltage Vgs

20V

Power Dissipation Max

2W Ta 17.2W Tc

Fall Time Typ

7.8 ns

Pulsed Drain Currentmax Idm

60A

Çalışma Sıcaklığı

150°C TJ

Rds On Max Id Vgs

6.1m Ω @ 15A, 10V

Terminal Pozisyonu

DUAL

REACH Uyumluluk Kodu

not_compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

20 Weeks

Ds Breakdown Voltagemin

30V

Vgs Max

±20V

Turn On Delay Time

11.6 ns