RQ3E150BNTB

Specifications

Case Connection

DRAIN

Drain To Source Voltage Vdss

30V

Yayın Yılı

2012

Terminal Sayısı

5

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Transistor Application

SWITCHING

Continuous Drain Current Id

15A

Input Capacitance Ciss Max Vds

3000pF @ 15V

Number Of Elements

1

Jesd30 Code

R-PDSO-F5

Transistor Element Material

SILICON

Kılıf / Paket

8-PowerVDFN

Current Continuous Drain Id25

15A Ta

Terminal Formu

FLAT

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

8

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.0074Ohm

Gate Charge Qg Max Vgs

45nC @ 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Cut Tape (CT)

Vgs Max

±20V

Ds Breakdown Voltagemin

30V

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

20 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

2W Ta

Pulsed Drain Currentmax Idm

60A

Çalışma Sıcaklığı

150°C TJ

Kurşunsuz

Lead Free

Vgsth Max Id

2.5V @ 1mA

REACH Uyumluluk Kodu

not_compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

5.3m Ω @ 15A, 10V

Terminal Pozisyonu

DUAL